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kw.\*:("Propriété photoélectronique")

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Results 1 to 25 of 1447

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Sensor and micromachined optical device technologies (24-26 May 2011, Beijing China)Wang, Yuelin; Xie, Huikai; Jin, Yufeng et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 1 vol, isbn 978-0-8194-8832-9Conference Proceedings

Analysis for the Stick-slip Motion of Differential Power Screw ActuatorZHANG, Jun-Bo; YAO PING; ZHANG, Xue-Jun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 81911J.1-81911J.9Conference Paper

Propriétés photoélectriques des structures métal-diélectrique-semiconducteur avec couche de diélectrique transparente par effet tunnel (revue)VUL, A. YA; SACHENKO, A. V.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1361-1376, issn 0015-3222Article

Level spectrum versus single level in surface recombinationLANDSBERG, P. T; BROWNE, D. C.Photovoltaic specialists conference. 19. 1987, pp 813-817Conference Paper

Study of Dynamic Weighing System Based on Photoelectric Detecting TechniqueSONG, Gui-Cai; NA, Yan-Xiang; CAO, Shi-Hao et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819112.1-819112.7Conference Paper

One dimensional photoconductivity in DNAMAGAN, J. D; BLAU, W; CROKE, D. T et al.Chemical physics letters. 1987, Vol 141, Num 6, pp 489-492, issn 0009-2614Article

Low surface recombination velocities on doped silicon and their implications for point contact solar cellsKING, R. R; SINTON, R. A; SWANSON, R. M et al.Photovoltaic specialists conference. 19. 1987, pp 1168-1173Conference Paper

Constant Fraction Discriminator for Fast, High Precision Pulsed TOF Laser RangefinderCHEN, Jian-Yong; SHEN, Dong-Qing; LI, Wan-Cai et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 81911F.1-81911F.6Conference Paper

Fabrication of Ultra-thin Silicon PIN DetectorMIN YU; XIANSHAN DONG; YING LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819103.1-809103.4Conference Paper

Study of the Bullet Position Measuring Model With Six Light ScreensFENG BIN; SHI, Xiu-Hua; KANG, Zhi-Qiang et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819108.1-819108.7Conference Paper

A study of bacteriorhodopsin-containing proteoliposome incorporation into bimolecular lipid membranesMIRSKY, V. M; SOKOLOV, V. S; DYUKOVA, T. V et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1983, Vol 11, Num 4-6, pp 327-346, issn 0022-0728Article

Bright Fluorescence from Individual Single-Walled Carbon NanotubesLEE, Andrea J; XIAOYONG WANG; CARLSON, Lisa J et al.Nano letters (Print). 2011, Vol 11, Num 4, pp 1636-1640, issn 1530-6984, 5 p.Article

Study on Effect of Polarization for Improving Signal Noise Ratio of Stellar Objects in DaytimeRUI-JIN, Zhang; XIAN HAO; WEI KAI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 81911M.1-81911M.6Conference Paper

Measurement of minority carrier lifetime by pulsed photoabsorption decayLANDIS, G. A; STODDARD, H.Photovoltaic specialists conference. 19. 1987, pp 761-763Conference Paper

Dember-Effekt und Photon-Drag in anisotropen Halbleitern = Effet Dember et entraînement par photons dans des semiconducteurs anisotropes = Dember effect and photon drag in anisotropic semiconductorsGENZON, D.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1984, Vol 33, Num 2, pp 15-19, issn 0043-6925Article

Minority-carrier properties of 1.93-eV Al0.37Ga0.63As grown by MOCVDAHRENKIEL, R. K; GREENBERG, D; DUNLAVY, D. J et al.Photovoltaic specialists conference. 19. 1987, pp 1180-1186Conference Paper

Resonant magneto-optical transitions from a deep level in PbTeNIEWODNICZANSKA-ZAWADZKA, J; LISCHKA, K.Solid state communications. 1984, Vol 50, Num 8, pp 721-723, issn 0038-1098Article

Phonon-electron coupling as a possible transducing mechanism in bioelectronic processes involving neuromelaninLACY, M. E.Journal of theoretical biology. 1984, Vol 111, Num 1, pp 201-204, issn 0022-5193Article

Influence of different types of surface treatment on photoelectric and optical properties of CdTe crystalsBAIDULLAEVA, A; MOZOL', P. E; VLASENKO, A. I et al.SPIE proceedings series. 1998, pp 53-55, isbn 0-8194-2808-6Conference Paper

Experimental characterization of minority carrier mirrors for gallium arsenide based solar cellsKLAUSMEIER-BROWN, M. E; KYONO, C. S; RANCOUR, D. P et al.Photovoltaic specialists conference. 19. 1987, pp 1174-1179Conference Paper

Measurement of minority carrier lifetimes and surface recombination velocities in solar cellsWOLF, M; NEWHOUSE, M.Photovoltaic specialists conference. 19. 1987, pp 1156-1161Conference Paper

Cinétique de photoréponse des structures MOS tunnelVUL, A. YA; DIDEJKIN, A. T; ZINCHIK, YU. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1471-1477, issn 0015-3222Article

Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper

Measurement of surface recombination velocity and emitter characteristics of solar cells by EBICBELL, R. O; DUBE, C. E.Photovoltaic specialists conference. 19. 1987, pp 795-798Conference Paper

PHOTOGALVANIC EFFECTS INVESTIGATION IN GALLIUM ARSENIDEALPEROVICH VL; BELINICHER VI; NOVIKOV VN et al.1982; FERROELECTRICS; ISSN 0015-0193; USA; DA. 1982; VOL. 45; NO 1-2; PP. 1-12; BIBL. 29 REF.Article

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